Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth
نویسندگان
چکیده
منابع مشابه
Static and dynamic properties of hydrogenated amorphous silicon with voids
We have employed ab initio techniques to study the structure and dynamics of voids in amorphous Si and hydrogenated amorphous silicon. Reconstruction effects at void surfaces and dynamical effects associated with H are particularly emphasized. We introduce unbonded H into the network, track its diffusive motion, and note a strong tendency for H to attack strained structures in the network. We c...
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We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theo...
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Surface roughening during plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates" Physical Review B. The morphology of a series of thin films of hydrogenated amorphous silicon ͑a-Si:H͒ grown by plasma-enhanced chemical-vapor deposition ͑PECVD͒ is studied using scanning tunneling microscopy. The substrates were atomically flat, oxide-free, single-cr...
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We report first principles ab initio density functional calculations of hydrogen dynamics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with simple models. Si-Si bond centers and Si ring centers are local energy minima as expected. We also describe a new mechanism for breaking Si-H bonds to release f...
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We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216-atom model for pure amorphous silicon (a-Si) has been employed as a starting point for our a-Si:H models with voids that were made by removing a cluster of silicon atoms out of the bulk and terminating the resulting dangling bonds w...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1853508